| PART |
Description |
Maker |
| HYB18H256321BF-11/12/14 HYB18H256321BF-10 HYB18H25 |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 8M X 32 SYNCHRONOUS GRAPHICS RAM MODULE, 0.21 ns, PBGA136
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 256兆GDDR3显卡内存GDDR3显卡内存
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 8M X 32 SYNCHRONOUS GRAPHICS RAM MODULE, 0.22 ns, PBGA136
|
Qimonda AG
|
| HYB18H512321AF-20 HYB18H512321AF-12 |
16M X 32 SYNCHRONOUS GRAPHICS RAM, 0.35 ns, PBGA136 11 X 14 MM, GREEN, PLASTIC, MO-207IDR-Z, TFBGA-136
16M X 32 SYNCHRONOUS GRAPHICS RAM, 0.22 ns, PBGA136
|
Infineon Technologies AG
|
| HYE18M1G16 HYE18M1G160BF-6 HYE18M1G160BF-7.5 HYE18 |
1-Gbit x16 DDR Mobile-RAM
|
Qimonda AG
|
| HY5DU283222Q HY5DU283222Q-45 HY5DU283222Q-55 HY5DU |
GDDR SDRAM - 128Mb
128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| HY5DS573222F-28 HY5DS573222FP-28 HY5DS573222FP-36 |
GDDR SDRAM - 256Mb
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| RX2.7GBIT/S TX2.7GBIT/S V23832-T2131-M101 V23832-T |
PAROLI 2 Tx AC, 2.7 Gbit/s 帕罗2个发送，交流2.7千兆/
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 2.7 Gbit/s,
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 2.7 Gbit/s, multistandard electrical interface
PAROLI 2 Tx AC, 1.25 Gbit/s
|
Infineon Technologies AG
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
| K4G323222M-PL70 K4G323222M-PL45 K4G323222M-PC45 K4 |
1M X 32 SYNCHRONOUS GRAPHICS RAM, 5.5 ns, PQFP100
1M X 32 SYNCHRONOUS GRAPHICS RAM, 4 ns, PQFP100
1M X 32 SYNCHRONOUS GRAPHICS RAM, 6 ns, PQFP100
1M X 32 SYNCHRONOUS GRAPHICS RAM, 4.5 ns, PQFP100
|
|
| KDA0471PL-66 KDA0476CN-50 KDA0476PL-66 KDA0476PL-8 |
66MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
50MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
80MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
66MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
80MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
120MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
|
Samsung Electronic
|
